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smls256h? se ptember 1984 ? revised november 1997 1 post office box 1443 ? houston, texas 77251?1443 organization ...32768 by 8 bits single 5-v power supply pin compatible with existing 256k mos roms, proms, and eproms all inputs / outputs fully ttl compatible max access / min cycle time v cc 10% ?27c/ pc256-10 100 ns ?27c/ pc256-12 120 ns ?27c/ pc256-15 150 ns ?27c/ pc256-17 170 ns ?27c/ pc256-20 200 ns ?27c/ pc256-25 250 ns power saving cmos technology very high-speed snap! pulse programming 3-state output buffers 400-mv minimum dc noise immunity with standard ttl loads latchup immunity of 250 ma on all input and output lines low power dissipation ( v cc = 5.5 v ) ? active . . . 165 mw worst case ? standby . . . 1.4 mw worst case (cmos input levels) temperature range options 256k eprom available with mil-std-883c class b high reliability processing (smj27c256) description the tms27c256 series are 32 768 by 8-bit (262 144-bit), ultraviolet (uv) light erasable, electrically programmable read-only memories (eproms). the tms27pc256 series are 32 768 by 8-bit (262 144-bit), one-time programmmable (otp) electrically programmable read-only memories (proms). please be aware that an important notice concerning avail ability, standard warranty, and use in critical applications of texas instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 3213231 14 5 6 7 8 9 10 11 12 13 29 28 27 26 25 24 23 22 21 430 15 16 17 18 19 20 pin nomenclature a0 ?a14 address inputs dq0 ?dq7 inputs (programming) / outputs e chip enable / powerdown g output enable gnd ground nc no internal connection nu make no external connection v cc 5-v power supply v pp 13-v power supply ? j package ( top view ) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 v pp a12 a7 a6 a5 a4 a3 a2 a1 a0 dq0 dq1 dq2 gnd v cc a14 a13 a8 a9 a11 g a10 e dq7 dq6 dq5 dq4 dq3 a8 a9 a11 nc g a10 e dq7 dq6 a6 a5 a4 a3 a2 a1 a0 nc dq0 dq1 dq2 nu dq3 dq4 a7 a12 v nu v a14 a13 fm package ( top view ) dq5 cc gnd pp ? only in program mode copyright ? 1997, texas instruments incorporated
smls256h? september 1984 ? revised november 1997 2 post office box 1443 ? houston, texas 77251?1443 description (continued) these devices are fabricated using power-saving cmos technology for high speed and simple interface with mos and bipolar circuits. all inputs (including program data inputs) can be driven by series 74 ttl circuits without the use of external pull-up resistors. each output can drive one series 74 ttl circuit without external resistors. the data outputs are 3-state for connecting multiple devices to a common bus. the tms27c256 and the tms27pc256 are pin compatible with 28-pin 256k mos roms, proms, and eproms. the tms27c256 eprom is offered in a dual-in-line ceramic package (j suffix) designed for insertion in mounting-hole rows on 15,2-mm (600-mil) centers. the tms27pc256 otp prom is supplied in a 32-lead plastic leaded chip-carrier package using 1,25-mm (50-mil) lead spacing (fm suffix). the tms27c256 and tms27pc256 are offered with two choices of temperature ranges of 0 c to 70 c (jl and fml suffixes) and ? 40 c to 85 c (je and fme suffixes). see table 1. all package styles conform to jedec standards. table 1. temperature range suffixes eprom and suffix for operating free-air temperature ranges and otp prom 0 c to 70 c ?40 c to 85 c tms27c512-xxx jl je tms27pc512-xxx fml fme these eproms and otp proms operate from a single 5-v supply (in the read mode), thus are ideal for use in microprocessor-based systems. one other 13-v supply is needed for programming . all programming signals are ttl level. these devices are programmable by the snap! pulse programming algorithm. the snap! pulse programming algorithm uses a v pp of 13 v and a v cc of 6.5 v for a nominal programming time of four seconds. for programming outside the system, existing eprom programmers can be used. locations can be programmed singly, in blocks, or at random.
smls256h? se ptember 1984 ? revised november 1997 3 post office box 1443 ? houston, texas 77251?1443 operation the seven modes of operation are listed in table 2. the read mode requires a single 5-v supply. all inputs are ttl level except for v pp during programming (13 v for snap! pulse), and 12 v on a9 for the signature mode. table 2. operation modes mode ? function read output disable standby programming verify program inhibit signature mode e v il v il v ih v il v ih v ih v il g v il v ih x v ih v il x v il v pp v cc v cc v cc v pp v pp v pp v cc v cc v cc v cc v cc v cc v cc v cc v cc a9 x x x x x x v h ? v h ? a0 x x x x x x v il v ih code dq0 ?dq7 data out hi-z hi-z data in data out hi-z mfg device dq0 ?dq7 data out hi-z hi-z data in data out hi-z 97 04 ? x can be v il or v ih . ? v h = 12 v 0.5 v. read/ output disable when the outputs of two or more tms27c256s or tms27pc256s are connected in parallel on the same bus, the output of any particular device in the circuit can be read with no interference from the competing outputs of the other devices. to read the output of a single device, a low-level signal is applied to the e and g pins. all other devices in the circuit should have their outputs disabled by applying a high-level signal to one of these pins. output data is accessed at pins dq0 through dq7. latchup immunity latchup immunity on the tms27c256 and tms27pc256 is a minimum of 250 ma on all inputs and outputs. this feature provides latchup immunity beyond any potential transients at the p.c. board level when the devices are interfaced to industry-standard ttl or mos logic devices. input-output layout approach controls latchup without compromising performance or packing density. power down active i cc supply current can be reduced from 30 ma to 500 a ( ttl-level inputs) or 250 a (cmos-level inputs) by applying a high ttl or cmos signal to the e pin. in this mode all outputs are in the high-impedance state. erasure ( tms27c256) before programming, the tms27c256 eprom is erased by exposing the chip through the transparent lid to a high intensity ultraviolet light (wavelength 2537 ?). eprom erasure before programming is necessary to assure that all bits are in the logic high state. logic lows are programmed into the desired locations. a programmed logic low can be erased only by ultraviolet light. the recommended minimum exposure dose (uv intensity exposure time) is 15-w ? s/cm 2 . a typical 12-mw / cm 2 , filterless uv lamp erases the device in 21 minutes. the lamp should be located about 2.5 cm above the chip during erasure. it should be noted that normal ambient light contains the correct wavelength for erasure. therefore, when using the tms27c256, the window should be covered with an opaque label.
smls256h? september 1984 ? revised november 1997 4 post office box 1443 ? houston, texas 77251?1443 initializing ( tms27pc256) the one-time programmable tms27pc256 prom is provided with all bits in the logic high state, then logic lows are programmed into the desired locations. logic lows programmed into an otp prom cannot be erased. snap! pulse programming the 256k eprom and otp prom are programmed using the ti snap! pulse programming algorithm illustrated by the flowchart in figure 1, which programs in a nominal time of four seconds. actual programming time varies as a function of the programmer used. data is presented in parallel (eight bits) on pins dq0 to dq7. once addresses and data are stable, e is pulsed. the snap! pulse programming algorithm uses initial pulses of 100 microseconds ( s) followed by a byte verification to determine when the addressed byte has been successfully programmed. up to 10 (ten) 100- s pulses per byte are provided before a failure is recognized. the programming mode is achieved when v pp = 13 v, v cc = 6.5 v, g = v ih , and e = v il . more than one device can be programmed when the devices are connected in parallel. locations can be programmed in any order. when the snap! pulse programming routine is complete, all bits are verified with v cc = v pp = 5 v. program inhibit programming can be inhibited by maintaining a high level input on the e pin. program verify programmed bits can be verified with v pp = 13 v when g = v il and e = v ih . signature mode the signature mode provides access to a binary code identifying the manufacturer and type. this mode is activated when a9 is forced to 12 v. two identifier bytes are accessed by toggling a0. all other addresses must be held low. the signature code for these devices is 9704. a0 selects the manufacturer?s code 97 (hex), and a0 high selects the device code 04, as shown in table 3. table 3. signature mode identifier ? pins identifier ? a0 dq7 dq6 dq5 dq4 dq3 dq2 dq1 dq0 hex manufacturer code v il 1 0 0 1 0 1 1 1 97 device code v ih 0 0 0 0 0 1 0 0 04 ? e = g = v il , a9 = v h , a1 ?a8 = v il , a10 ?a15 = v il , v pp = v cc , pgm = v ih or v il .
smls256h? se ptember 1984 ? revised november 1997 5 post office box 1443 ? houston, texas 77251?1443 start address = first location v cc = 6.5 v, v pp = 13 v last address? address = first location x = 0 v cc = v pp = 5 v 10% compare all bytes to original data device passed increment address increment address verify one byte program one pulse = t w = 100 s x = 10? x = x + 1 last address? device failed pass no yes yes no fail fail pass no program mode interactive mode final verification yes program one pulse = t w = 100 s figure 1. snap! pulse programming flowchart
smls256h? september 1984 ? revised november 1997 6 post office box 1443 ? houston, texas 77251?1443 logic symbol ? 14 [pwr dwn] & en a a a a a a a a a0 a1 a2 a3 a4 a5 a6 a7 a8 a9 a10 a11 a12 a13 a14 e g 10 9 8 7 6 5 4 3 25 24 21 23 2 26 27 20 22 eprom 32 768 8 11 12 13 15 16 17 18 19 dq0 dq1 dq2 dq3 dq4 dq5 dq6 dq7 a 0 32 767 0 a 0 32 767 a a a a a a a a 14 [pwr dwn] & en a0 a1 a2 a3 a4 a5 a6 a7 a8 a9 a10 a11 a12 a13 a14 e g 10 9 8 7 6 5 4 3 25 24 21 23 2 26 27 20 22 otp prom 32 768 8 11 12 13 15 16 17 18 19 dq0 dq1 dq2 dq3 dq4 dq5 dq6 dq7 0 ? these symbols are in accordance with ansi / ieee std 91-1984 and iec publication 617-12. pin numbers shown are for j package. absolute maximum ratings over operating free-air temperature range (unless otherwise noted) ? supply voltage range, v cc (see note 1) : ?0.6 v to 7 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . supply voltage range, v pp : ?0.6 v to 14 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . input voltage range (see note 1): all inputs except a9 : ?0.6 v to v cc + 1 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . a9 : ?0.6 v to 13.5 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . output voltage range (see note 1) : ?0.6 v to v cc + 1 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating free-air temperature range (?27c256-_ _jl, ?27pc256-_ _fml) t a :0 c to 70 c . . . . . . . . . . . . . . operating free-air temperature range (?27c5256-_ _je, ?27pc256-_ _fme) t a :?40 c to 85 c . . . . . . . . . . . storage temperature range, t stg :?65 c to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ? stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, a nd functional operation of the device at these or any other conditions beyond those indicated under ?recommended operating conditi ons? is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. note 1: all voltage values are with respect to gnd.
smls256h? se ptember 1984 ? revised november 1997 7 post office box 1443 ? houston, texas 77251?1443 recommended operating conditions min nom max unit v cc supply voltage read mode (see note 2) 4.5 5 5.5 v v cc supply voltage snap! pulse programming algorithm 6.25 6.5 6.75 v v pp supply voltage read mode v cc ?0.6 v cc +0.6 v v pp supply voltage snap! pulse programming algorithm 12.75 13 13.25 v v ih high-level dc input voltage ttl 2 v cc +1 v v ih high-level dc input voltage cmos v cc ? 0.2 v cc +1 v v il low-level dc input voltage ttl ? 0.5 0.8 v v il low-level dc input voltage cmos ? 0.5 0.2 v t a operating free-air temperature ?27c256-_ _jl ?27pc256-_ _fml 0 70 c t a operating free-air temperature ?27c256-_ _je ?27pc256-_ _fme ?40 85 c note 2: v cc must be applied before or at the same time as v pp and removed after or at the same time as v pp . the device must not be inserted into or removed from the board when v pp or v cc is applied. electrical characteristics over recommended ranges of operating conditions parameter test conditions min typ ? max unit v oh high-level dc output voltage i oh = ? 2.5 ma 3.5 v v oh high-level dc output voltage i oh = ? 20 a v cc ? 0.1 v v ol low-level dc output voltage i ol = 2.1 ma 0.4 v v ol low-level dc output voltage i ol = 20 a 0.1 v i i input current (leakage) v i = 0 v to 5.5 v 1 a i o output current (leakage) v o = 0 v to v cc 1 a i pp1 v pp supply current v pp = v cc = 5.5 v 1 10 a i pp2 v pp supply current (during program pulse) v pp = 13 v 35 50 ma i cc1 v cc supply current ttl-input level v cc = 5.5 v, e = v ih 250 500 a i cc1 v cc supply current (standby) cmos-input level v cc = 5.5 v, e = v cc 100 250 a i cc2 v cc supply current (active) v cc = 5.5 v, e = v il , t cycle = minimum cycle time, outputs open 15 30 ma capacitance over recommended ranges of supply voltage and operating free-air temperature, f = 1 mhz ? parameter test conditions min typ ? max unit c i input capacitance v i = 0, f = 1 mhz 6 10 pf c o output capacitance v o = 0, f = 1 mhz 10 14 pf ? capacitance measurements are made on a sample basis only. ? typical values are at t a = 25 c and nominal voltages.
smls256h? september 1984 ? revised november 1997 8 post office box 1443 ? houston, texas 77251?1443 switching characteristics over recommended range of operating conditions parameter test conditions (see notes 3 and 4) ?27c256-10 ?27pc256-10 ?27c256-12 ?27pc256-12 ?27c256-15 ?27pc256-15 unit parameter (see notes 3 and 4) min max min max min max unit t a(a) access time from address 100 120 150 ns t a(e) access time from chip enable c = 100 pf, 100 120 150 ns t en(g) output enable time from g c l = 100 pf, 1 series 74 ttl load, 55 55 75 ns t dis output disable time from g or e , whichever occurs first ? 1 series 74 ttl load, input t r 20 ns, input t f 20 ns 0 45 0 45 0 60 ns t v(a) output data valid time after change of address, e , or g , whichever occurs first ? input t f 20 ns 0 0 0 ns parameter test conditions (see notes 3 and 4) ?27c256-17 ?27pc256-17 ?27c256-20 ?27pc256-20 ?27c256-25 ?27pc256-25 unit parameter (see notes 3 and 4) min max min max min max unit t a(a) access time from address 170 200 250 ns t a(e) access time from chip enable c = 100 pf, 170 200 250 ns t en(g) output enable time from g c l = 100 pf, 1 series 74 ttl load, 75 75 100 ns t dis output disable time from g or e , whichever occurs first ? 1 series 74 ttl load, input t r 20 ns, input t f 20 ns 0 60 0 60 0 60 ns t v(a) output data valid time after change of address, e , or g , whichever occurs first ? input t f 20 ns 0 0 0 ns ? value calculated from 0.5 v delta to measured level. this parameter is only sampled and not 100% tested. notes: 3. for all switching characteristics the input pulse levels are 0.4 v to 2.4 v. timing measurements are made at 2 v for lo gic high and 0.8 v for logic low) (see figure 2). 4. common test conditions apply for the t dis except during programming. switching characteristics for programming: v cc = 6.50 v and v pp = 13 v (snap! pulse), t a = 25 c (see note 3) parameter min max unit t dis(g) output disable time from g 0 130 ns t en(g) output enable time from g 150 ns note 3: for all switching characteristics, the input pulse levels are 0.4 v to 2.4 v. timing measurements are made at 2 v for lo gic high and 0.8 v for logic low). timing requirements for programming min nom max unit t h(a) hold time, address 0 s t h(d) hold time, data 2 s t w(ipgm) pulse duration, initial program 95 100 105 s t su(a) setup time, address 2 s t su(g) setup time, g 2 s t su(e) setup time, e 2 s t su(d) setup time, data 2 s t su(vpp) setup time, v pp 2 s t su(vcc) setup time, v cc 2 s
smls256h? se ptember 1984 ? revised november 1997 9 post office box 1443 ? houston, texas 77251?1443 parameter measurement information 2.08 v r l = 800 ? output under test c l = 100 pf (see note a) note a: c l includes probe and fixture capacitance. ac testing input/output wave forms 2.4 v 0.4 v 0.8 v 0.8 v 2 v 2 v ac testing inputs are driven at 2.4 v for logic high and 0.4 v for logic low. timing measurements are made at 2 v for logic high and 0.8 v for logic low for both inputs and outputs. figure 2. ac testing output load circuit a0 ?a14 e addresses valid t a(e) g dq0 ?dq7 hi-z t en(g) t v(a) t dis output valid v ih v il v ih v il v ih v il v oh v ol hi-z t a(a) figure 3. read-cycle timing
smls256h? september 1984 ? revised november 1997 10 post office box 1443 ? houston, texas 77251?1443 parameter measurement information program verify v ih v il v ih /v oh v il /v oh v pp ? v cc v cc ? v cc v ih v il v ih v il a0 ?a14 v pp v cc e g t su(a) t su(d) t en(g) ? t dis(g) ? data-in stable data-out valid t su(vpp) t su(vcc) t h(d) t su(e) t w(ipgm) t su(g) address stable hi-z address n+1 dq0 ?dq7 t h(a) ? t dis(g) and t en(g) are characteristics of the device but must be accommodated by the programmer ? 13-v v pp and 6.5-v v cc for snap! pulse programming figure 4. program-cycle timing (snap! pulse programming)
smls256h? se ptember 1984 ? revised november 1997 11 post office box 1443 ? houston, texas 77251?1443 fm (r-pqcc-j32) plastic j-leaded chip carrier 4040201-4 / b 03/95 0.020 (0,51) 0.015 (0,38) seating plane 0.140 (3,56) 0.132 (3,35) 0.123 (3,12) 0.129 (3,28) 0.043 (1,09) 0.049 (1,24) 0.008 (0,20) nom 0.595 (15,11) 0.553 (14,05) 0.585 (14,86) typ 0.030 (0,76) 0.547 (13,89) 30 1 0.495 (12,57) 0.453 (11,51) 0.485 (12,32) 0.447 (11,35) 5 4 20 13 14 29 21 0.050 (1,27) 0.004 (0,10) notes: a. all linear dimensions are in inches (millimeters). b. this drawing is subject to change without notice. c. falls within jedec ms-016
smls256h? september 1984 ? revised november 1997 12 post office box 1443 ? houston, texas 77251?1443 j (r-cdip-t**) ceramic side-braze dual-in-line package 4040084 / b 04/95 b c 0.018 (0,46) min 0.125 (3,18) min 0.022 (0,56) 0.012 (0,30) 0.014 (0,36) 0.008 (0,20) seating plane a wide 24 a pins** dim max min narr 0.624(15,85) 0.624(15,85) 0.590(14,99) 0.590(14,99) 1.235(31,37) 1.235(31,37) 1.265(32,13) 1.265(32,13) min max b c max min 0.541(13,74) 0.598(15,19) 0.514(13,06) 0.571(14,50) 0.514(13,06) 0.571(14,50) 0.541(13,74) 0.598(15,19) 1.668(42,37) 1.668(42,37) 1.632(41,45) 1.632(41,45) 0.590(14,99) 0.590(14,99) 0.624(15,85) 0.624(15,85) narr 32 wide 0.514(13,06) 0.571(14,50) 0.541(13,74) 0.598(15,19) 1.465(37,21) 1.465(37,21) 1.435(36,45) 1.435(36,45) 0.590(14,99) 0.590(14,99) 0.624(15,85) 0.624(15,85) narr 28 wide wide 40 narr 0.624(15,85) 0.624(15,85) 0.590(14,99) 0.590(14,99) 2.032(51,61) 2.032(51,61) 2.068(52,53) 2.068(52,53) 0.541(13,74) 0.598(15,19) 0.514(13,06) 0.571(14,50) 24 pin shown 1 12 24 13 0.045 (1,14) 0.065 (1,65) 0.090 (2,29) 0.060 (1,53) lens protrusion 0.010 (0,25) max 0.175 (4,45) 0.140 (3,56) 0.100 (2,54) 0 ? 10 notes: a. all linear dimensions are in inches (millimeters). b. this drawing is subject to change without notice. c. this package can be hermetically sealed with a ceramic lid using glass frit. d. index point is provided on cap for terminal identification only on press ceramic glass frit seal only.
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